Xiaodong Yan

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Scholarly Contributions

Journals/Publications

• Cain, J. M., Yan, X., Liu, S. E., Qian, J. H., Zeng, T. T., Sangwan, V. K., Hersam, M. C., Chou, S. S., & Lu, T. (2025). Supplemental Information Influence of Surface Adsorption on MoS2 Memtransistor Switching Kinetics.
• Chen, J., Cui, C., Lawrie, B., Xue, Y., Guha, S., Eichenfield, M., Zhao, H., & Yan, X. (2025). Low-dimensional solid-state single-photon emitters. Nanophotonics.
• Liu, H., Wu, J., Ma, J., Yan, X., Yang, N., He, X. u., He, Y., Zhang, H., Hsu, T., Qian, J. H., & others, . (2024). A van der Waals interfacial junction transistor for reconfigurable fuzzy logic hardware. Nature Electronics, 1--9.
• Sangwan, V., Yan, X., Qian, J., Ma, J., Zhang, A., Liu, S., Bland, M., Liu, K., Wang, X., Wang, H., & others, . (2024). Reconfigurable Mixed-Kernel Heterojunction Transistors for Personalized Support Vector Machine Hardware. Bulletin of the American Physical Society.
• Smyth, C. M., Cain, J. M., Boehm, A., Ohlhausen, J. A., Lam, M. N., Yan, X., Liu, S. E., Zeng, T. T., Sangwan, V. K., Hersam, M. C., & others, . (2024). Direct Characterization of Buried Interfaces in 2D/3D Heterostructures Enabled by GeO2 Release Layer. ACS Applied Materials \& Interfaces, 16(2), 2847--2860.
• Zhao, H., Hus, S. M., Chen, J., Yan, X., Lawrie, B. J., Jesse, S., Li, A., Liang, L., & Htoon, H. (2024). Telecom-Wavelength Single-Photon Emitters in Multilayer InSe. ACS nano.
• Cain, J. M., Yan, X., Liu, S. E., Qian, J. H., Zeng, T. T., Sangwan, V. K., Hersam, M. C., Chou, S. S., & Lu, T. (2023). Influence of surface adsorption on MoS2 memtransistor switching kinetics. Applied Physics Letters, 122(22).
• Sui, X., Rangnekar, S. V., Lee, J., Liu, S. E., Downing, J. R., Chaney, L. E., Yan, X., Jang, H., Pu, H., Shi, X., & others, . (2023). Fully Inkjet-Printed, 2D Materials-Based Field-Effect Transistor for Water Sensing (Adv. Mater. Technol. 22/2023). Advanced Materials Technologies, 8(22), 2370125.
• Yan, X., Qian, J. H., Ma, J., Zhang, A., Liu, S. E., Bland, M. P., Liu, K. J., Wang, X., Sangwan, V. K., Wang, H., & others, . (2023). Reconfigurable mixed-kernel heterojunction transistors for personalized support vector machine classification. Nature Electronics, 6(11), 862--869.
• Yan, X., Zheng, Z., Sangwan, V. K., Qian, J. H., Wang, X., Liu, S. E., Watanabe, K., Taniguchi, T., Xu, S., Jarillo-Herrero, P., & others, . (2023). Moir\'e synaptic transistor with room-temperature neuromorphic functionality. Nature, 624(7992), 551--556.
• Smyth, C. M., Cain, J. M., Lang, E. J., Lu, P., Yan, X., Liu, S. E., Yuan, J., Bland, M. P., Madden, N. J., Ohta, T., & others, . (2022). Resilience of monolayer MoS2 memtransistor under heavy ion irradiation. Journal of Materials Research, 37(17), 2723--2737.
• Yan, X., Qian, J. H., Sangwan, V. K., & Hersam, M. C. (2022). Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems (Adv. Mater. 48/2022). Advanced Materials, 34(48), 2270330.
• Fan, L., Yan, X., Wang, H., & Wang, L. V. (2021). Real-time observation and control of optical chaos. Science advances, 7(3), eabc8448.
• Jiang, S., Song, J., Zhang, Y., Nie, M., Kim, J., Marcano, A. L., Kadlec, K., Mills, I., Yan, X., Liu, H., & others, . (2021). Nano-optoelectrodes integrated with flexible multifunctional fiber probes by high-throughput scalable fabrication. ACS applied materials \& interfaces, 13(7), 9156--9165.
• Liu, H., Wu, T., Yan, X., Wu, J., Wang, N., Du, Z., Yang, H., Chen, B., Zhang, Z., Liu, F., & others, . (2021). A tantalum disulfide charge-density-wave stochastic artificial neuron for emulating neural statistical properties. Nano Letters, 21(8), 3465--3472.
• Wu, J., Wang, N., Yan, X., & Wang, H. (2021). Emerging low-dimensional materials for mid-infrared detection. Nano Research, 14, 1863--1877.
• Yan, X., Ma, J., Wu, T., Zhang, A., Wu, J., Chin, M., Zhang, Z., Dubey, M., Wu, W., Chen, M. S., & others, . (2021). Reconfigurable Stochastic neurons based on tin oxide/MoS2 hetero-memristors for simulated annealing and the Boltzmann machine. Nature Communications, 12(1), 5710.
• Chen, B., Yang, H., Song, B., Meng, D., Yan, X., Li, Y., Wang, Y., Hu, P., Ou, T., Barnell, M., & others, . (2020). A memristor-based hybrid analog-digital computing platform for mobile robotics. Science Robotics, 5(47), eabb6938.
• Ma, Y., Xiao, M., Du, Z., Yan, X., Cheng, K., Clavel, M., Hudait, M. K., Kravchenko, I., Wang, H., & Zhang, Y. (2020). Tri-gate GaN junction HEMT. Applied Physics Letters, 117(14).
• Wong, H. Y., Xiao, M., Wang, B., Chiu, Y. K., Yan, X., Ma, J., Sasaki, K., Wang, H., & Zhang, Y. (2020). TCAD-machine learning framework for device variation and operating temperature analysis with experimental demonstration. IEEE Journal of the Electron Devices Society, 8, 992--1000.
• Wu, J., Chen, H., Yang, N., Cao, J., Yan, X., Liu, F., Sun, Q., Ling, X. i., Guo, J., & Wang, H. (2020). High tunnelling electroresistance in a ferroelectric van der Waals heterojunction via giant barrier height modulation. Nature Electronics, 3(8), 466--472.
• Xiao, M., Du, Z., Xie, J., Beam, E., Yan, X., Cheng, K., Wang, H., Cao, Y. u., & Zhang, Y. (2020). Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN. Applied Physics Letters, 116(5).
• Xiao, M., Yan, X., Xie, J., Beam, E., Cao, Y. u., Wang, H., & Zhang, Y. (2020). Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN. Applied Physics Letters, 117(18).
• Yang, H., Chen, B., Song, B., Meng, D., Tiwari, S., Krishnamoorthy, A., Yan, X., Liu, Z., Wang, Y., Hu, P., & others, . (2020). Memristive device characteristics engineering by controlling the crystallinity of switching layer materials. ACS Applied Electronic Materials, 2(6), 1529--1537.
• Zhao, H., Wang, B., Liu, F., Yan, X., Wang, H., Leong, W. S., Stevens, M. J., Vashishta, P., Nakano, A., Kong, J., & others, . (2020). Fluidic flow assisted deterministic folding of van der Waals materials. Advanced Functional Materials, 30(13), 1908691.
• Allen, N., Xiao, M., Yan, X., Sasaki, K., Tadjer, M. J., Ma, J., Zhang, R., Wang, H., & Zhang, Y. (2019). Vertical Ga 2 O 3 Schottky barrier diodes with small-angle beveled field plates: A Baliga???s figure-of-merit of 0.6 GW/cm 2. IEEE Electron Device Letters, 40(9), 1399--1402.
• Wang, B., Xiao, M., Yan, X., Wong, H. Y., Ma, J., Sasaki, K., Wang, H., & Zhang, Y. (2019). High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K. Applied Physics Letters, 115(26).
• Sanchez, E. I., Yan, X., Rutherglen, C., Kane, A., Cain, T., Marsh, P., Liu, Q., Galatsis, K., Wang, H., & Zhou, C. (2018). Aligned carbon nanotube synaptic transistors for large-scale neuromorphic computing. ACS nano, 12(7), 7352--7361.
• Yan, X., Esqueda, I. S., Ma, J., Tice, J., & Wang, H. (2018). High breakdown electric field in $\beta$-Ga2O3/graphene vertical barristor heterostructure. Applied Physics Letters, 112(3).
• Yan, X., Wang, H., & Sanchez, E. I. (2018). Temperature-dependent transport in ultrathin black phosphorus field-effect transistors. Nano Letters, 19(1), 482--487.
• Yan, X., Wang, H., Barnaby, H., & Esqueda, I. S. (2018). Impact ionization and interface trap generation in 28-nm MOSFETs at cryogenic temperatures. IEEE Transactions on Device and Materials Reliability, 18(3), 456--462.
• Esqueda, I. S., Tian, H. e., Yan, X., & Wang, H. (2017). Transport properties and device prospects of ultrathin black phosphorus on hexagonal boron nitride. IEEE Transactions on Electron Devices, 64(12), 5163--5171.
• Liao, B., Zhao, H., Najafi, E., Yan, X., Tian, H. e., Tice, J., Minnich, A. J., Wang, H., & Zewail, A. H. (2017). Spatial-temporal imaging of anisotropic photocarrier dynamics in black phosphorus. Nano Letters, 17(6), 3675--3680.
• Qi, M., Li, G., Ganguly, S., Zhao, P., Yan, X., Verma, J., Song, B. o., Zhu, M., Nomoto, K., Xing, H. G., & others, . (2017). Strained GaN quantum-well FETs on single crystal bulk AlN substrates. Applied Physics Letters, 110(6).
• Tian, H. e., Cao, X. i., Xie, Y., Yan, X., Kostelec, A., DiMarzio, D., Chang, C., Zhao, L., Wu, W., Tice, J., & others, . (2017). Emulating bilingual synaptic response using a junction-based artificial synaptic device. ACS nano, 11(7), 7156--7163.
• Zhao, H., Dong, Z., Tian, H. e., DiMarzi, D., Han, M., Zhang, L., Yan, X., Liu, F., Shen, L., Han, S., & others, . (2017). Atomically thin femtojoule memristive device. Advanced Materials, 29(47), 1703232.
• Zhao, H., Dong, Z., Tian, H. e., DiMarzio, D., Han, M., Zhang, L., Yan, X., Liu, F., Shen, L., Han, S., & others, . (2017). Atomically-thin Femtojoule Filamentary Memristor. arXiv preprint arXiv:1709.04062.
• Tian, H. e., Deng, B., Chin, M. L., Yan, X., Jiang, H., Han, S., Sun, V., Xia, Q., Dubey, M., Xia, F., & others, . (2016). A dynamically reconfigurable ambipolar black phosphorus memory device. ACS nano, 10(11), 10428--10435.
• Tian, H. e., Tice, J., Fei, R., Tran, V. y., Yan, X., Yang, L. i., & Wang, H. (2016). Low-symmetry two-dimensional materials for electronic and photonic applications. Nano Today, 11(6), 763--777.
• Li, W., Sharmin, S., Ilatikhameneh, H., Rahman, R., Lu, Y., Wang, J., Yan, X., Seabaugh, A., Klimeck, G., Jena, D., & others, . (2015). Polarization-engineered III-nitride heterojunction tunnel field-effect transistors. IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 1, 28--34.
• Qi, M., Li, G., Protasenko, V., Zhao, P., Verma, J., Song, B. o., Ganguly, S., Zhu, M., Hu, Z., Yan, X., & others, . (2015). Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes. Applied Physics Letters, 106(4).
• Qi, M., Nomoto, K., Zhu, M., Hu, Z., Zhao, Y., Protasenko, V., Song, B. o., Yan, X., Li, G., Verma, J., & others, . (2015). High breakdown single-crystal GaN pn diodes by molecular beam epitaxy. Applied Physics Letters, 107(23).
• Song, B. o., Zhu, M., Hu, Z., Qi, M., Nomoto, K., Yan, X., Cao, Y. u., Jena, D., & Xing, H. G. (2015). Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts. IEEE Electron Device Letters, 37(1), 16--19.
• Yan, X., Li, W., Islam, S. M., Pourang, K., Xing, H. G., Fay, P., & Jena, D. (2015). Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions. Applied Physics Letters, 107(16).
• Zhu, M., Song, B. o., Qi, M., Hu, Z., Nomoto, K., Yan, X., Cao, Y. u., Johnson, W., Kohn, E., Jena, D., & others, . (2015). 1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon. IEEE Electron Device Letters, 36(4), 375--377.
• Li, G., Song, B. o., Ganguly, S., Zhu, M., Wang, R., Yan, X., Verma, J., Protasenko, V., Grace, X. H., & Jena, D. (2014). Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructure field-effect transistors on AlN. Applied physics letters, 104(19).
• Yue, Y., Yan, X., Li, W., Xing, H. G., Jena, D., & Fay, P. (2014). Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing. Journal of Vacuum Science \& Technology B, 32(6).
• Huang, C. C., Xu, F. J., Yan, X. D., Song, J., Xu, Z. Y., Cen, L. B., Wang, Y., Pan, J. H., Wang, X. Q., Yang, Z. J., & others, . (2011). Intersubband transitions at atmospheric window in AlxGa1- xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer. Applied Physics Letters, 98(13).
• Song, J., Xu, F. J., Yan, X. D., Lin, F., Huang, C. C., You, L. P., Yu, T. J., Wang, X. Q., Shen, B., Wei, K., & others, . (2010). High conductive gate leakage current channels induced by In segregation around screw-and mixed-type threading dislocations in lattice-matched InxAl1- xN/GaN heterostructures. Applied Physics Letters, 97(23).

Proceedings Publications

• Cain, J. M., Smyth, C. M., Yan, X., Liu, S. E., Sangwan, V. K., Hersam, M. C., Chou, S. S., & Lu, T. (2022). Influence of Molecular Adsorption on MoS2 Memtransistor Switching Kinetics. In Electrochemical Society Meeting Abstracts 242.
• Ma, Y., Xiao, M., Zhang, Y., Du, Z., Yan, X., Wang, H., Cheng, K., Clavel, M., Hudait, M. K., Tao, L., & others, . (2021). Kilovolt tri-gate GaN junction HEMTs with high thermal stability. In 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
• Xiao, M., Ma, Y., Du, Z., Yan, X., Zhang, R., Cheng, K., Liu, K., Xie, A., Beam, E., Cao, Y., & others, . (2020). 5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode. In 2020 IEEE International Electron Devices Meeting (IEDM).
• Liu, H., Yan, X., Zhao, H., & Wang, H. (2019). Emerging Low Dimensional Material Devices for Beyond von-Neumann Computing. In 2019 Device Research Conference (DRC).
• Yan, X., & Wang, H. (2017). Novel electronic devices based on low-symmetry two-dimensional materials. In 2017 IEEE 17th International Conference on Nanotechnology (IEEE-NANO).
• Yan, X., Tian, H. e., Xie, Y., Kostelec, A., Zhao, H., Cha, J. J., Tice, J., & Wang, H. (2017). A 2D Material based Gate Tunable Memristive Device for Emulating Modulatory Input-dependent Hetero-synaptic Plasticity.. In APS March Meeting Abstracts, 2017.
• Song, B. o., Zhu, M., Hu, Z., Qi, M., Yan, X., Cao, Y. u., Kohn, E., Jena, D., & Xing, H. G. (2014). AlGaN/GaN MIS-HEMT on silicon with steep sub-threshold swing< 60 mV/dec over 6 orders of drain current swing and relation to traps. In 2014 Silicon Nanoelectronics Workshop (SNW).

Others

• Smyth, C., Cain, J., Lang, E., Madden, N., Hattar, K., Yan, X., Yuan, J., Bland, M., Ohta, T., Sangwan, V., & others, . (2025). Heavy Ion Irradiation Effects on MoS2 Memtransistors..
• Hersam, M. C., Yan, X., Qian, J. H., Ma, J., Sangwan, V. K., & Wang, H. (2024). Mixed-kernel heterojunction transistors, fabricating methods, and applications of the same.